Rapid construction of phase diagram by combinatorial materials chip with a continuous composition spreadThursday (24.09.2020) 10:40 - 10:55 M: Modelling and Simulation 2 Part of:
The high-throughput experimentation is one of the three supporting cornerstones and key technologies of the Materials Genome Engineering (MGE) programme. Combined with high-throughput preparation methods, high-throughput characterization of structure and composition is the basis for rapidly constructing structure-composition-performance relationships. The main ideas of the overall framework have been published in 2015. Following these ideas, this paper reports the progress in the rapid construction of phase diagrams using combinatorial thin-film material chips, including the homogenization heat treatment, the pixel-by-pixel laser heat treatment, and the high-throughput characterization using microbeam X-ray diffraction and fluorescence.
The multi-layered thin film precursors covering the entire composition range of Fe-Co-Ni ternary system was prepared using a high throughput combinatorial ion beam deposition system (HTC-IBD) with a continuously moving shutter. The film stack was 100 nm thick and was subject to isothermal annealing followed by quenching. Pixel-by-pixel composition and crystal structure characterization on the chip was performed by micro-beam XRD and XRF on beamline 11-ID-D of APS/ANL. The diffracted signal was collected by a Pilatus 2M area detector by Dectris Inc at a rate of 1 s/pattern. The XRD patterns were automatically processed, phase-identified and categorized by computer. Different clustering strategies were compared to determine the efficiency of the algorithm. The constructed phase-composition maps in this study are consistence with the corresponding isothermal sections in the ASM Alloy Phase Diagram.