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WEB Theoretical model for optimizing doping concentrations for solar energy conversion efficiency

Thursday (24.09.2020)
11:35 - 11:50 M: Modelling and Simulation 1
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Optimizing doping concentrations in semiconductors for solar energy conversion applications, such as solar cells and photocatalysts mostly relies on exhaustive trial-and-error experiments. In this talk, I will introduce my recently developed theoretical model for doping concentration optimization with comparisons to experimental results. In photocatalytic semiconductors, it has been believed that matching the depletion region length with the radius of spherical particle was the way to maximize the solar energy conversion efficiency. However, through our theoretical model, heavy electron and hole systems have limited drift length of photoexcited carriers and need sufficient strength of built-in electrostatic potential. For band offset engineering, our theoretical model successfully explains that doping concentrations of n-type or p-type dopants in semiconductors change the band edge level due to the variation of surface dipole moment.

Ph.D. Heechae Choi
University of Cologne