WEB New Insight to the Nucleation Behaviour of Iron Oxide by Magnetic-Field Assisted Chemical Vapour DepositionFriday (25.09.2020) 10:55 - 11:10 Z: Special Symposia I Part of:
Chemical Vapour Deposition (CVD) is the method of choice in the fabrication of high quality homogeneous thin films for electronic devices, catalysis and renewable energy storage, respectively. Control over the conductivity, optical absorption and surface reactivity, can be achieved by variation of pressure, temperature, molecular precursor and substrates that showcase the adaptability of the process. Additional application of electric or magnetic fields also showed significant influence on the obtained thin film morphology and changed physical properties, such as conductivity, magnetic anisotropy and photocatalytic activity. Highlight examples of positive field influences are titanium and vanadium dioxide thin films as well as alignment of carbon nanotubes (CNTs) and magnetic Co/Ni nanostructures.
Based on current state of the art depositions of iron oxide in magnetic field-assisted CVD (mf-CVD), additional decomposition experiments of [〖Fe^III (O^t Bu)〗_3 ]_2 in mf-CVD are presented. The focus of this work lies on the investigation of early stage thin film growth and how the variation of temperature and magnetic field strength change the nucleation behaviour at the transition from molecule to thin film. Therefore, the minimum sublimation temperature of the precursor was determined to guarantee homogeneous, yet low precursor flow to the substrate. Different stages of the field matter interplay will be presented and discussed within the frame of current state-of-the-art mf-CVD experiments.